WNM2034 n-channel, 20v, 3.6a, power mosfet descriptions the WNM2034 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion and power switch applications. standard product WNM2034 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-23 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch sot-23 configuration (top view) w34* w34 = device code * = month (a~z) marking order information device package shipping WNM2034-3/tr sot-23 3000/tape&reel v ds (v) rdson (
) 0.037 @ 10v 20 0.045 @ 4.5v d 3 2 s 1 g product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
absolute maximum ratings ta = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds 20 gate-source voltage v gs 12 v t a =25c 3.6 3.3 continuous drain current (t j = 150 c) a t a =70c i d 2.8 2.6 a t a =25c 0.8 0.7 maximum power dissipation a t a =70c p d 0.5 0.4 w t a =25c 3.2 3 continuous drain current (t j = 150 c) b t a =70c i d 2.6 2.4 a t a =25c 0.6 0.5 maximum power dissipation b t a =70c p d 0.4 0.3 w pulsed drain current c i dm 10 a operating junction and storage temperature range t j , t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 125 150 junction-to-ambient thermal resistance a steady state r ja 140 175 t ? 10 s 150 180 junction-to-ambient thermal resistance b steady state r ja 165 210 junction-to-case thermal resistance steady state r jc 60 75 c/w a surface mounted on fr4 board using 1 in sq pad size, 1oz cu. b surface mounted on fr4 board using the minimum recommended pad size, 1oz cu. c repetitive rating, pulse width li mited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width li mited by junction temperature t j(max) =150c. WNM2034 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d zero gate voltage drain current i dss v ds =16 v, v gs gate-to-source leakage current i gss v ds = 0 v, v gs = 12v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 1.0 1.5 2.0 v v gs = 10v, i d = 3.6a 37 47 drain-to-source on-resistance r ds(on) v gs = 4.5v, i d = 3.0a 45 56 m ? forward transconductance g fs v ds = 5 v, i d = 3.6a 5.3 s charges, capacitances and gate resistance input capacitance c iss 505 output capacitance c oss 60 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 50 pf total gate charge q g(tot) 11.4 threshold gate charge q g(th) 0.90 gate-to-source charge q gs 1.18 gate-to-drain charge q gd v gs = 10 v, v ds = 10 v, i d = 3.1a 2.1 nc switching characteristics turn-on delay time td(on) 4.4 rise time tr 3.2 turn-off delay time td(off) 24.5 fall time tf v gs = 10 v, v ds = 10 v, r l =3 ? , r g =6 ? 3.2 ns source-to-drain diode characteristics forward voltage v sd v gs = 0 v, i s = 1.5a 0.80 0.95 1.50 v = 250ua 20 v = 0v 1 ua WNM2034 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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